Graphene Powder Resistivity Tester

Graphene Powder Resistivity Tester enables precise measurements. Brand and certification should comply with industry standards—select instruments certified by national or international standards (e.g., compliant with GB/T standards).For further details on specific model parameters or supplier information, please refer to the original document link or contact the manufacturer for technical documentation.

GB/T 1551-1995 Determination of Resistivity of Silicon and Germanium Single Crystals—DC Two-Probe Method

Determination of Sheet Resistance of Silicon Epitaxial Layers, Diffusion Layers, and Ion Implantation Layers—Linear Four-Probe Method

GB/T 11073 Summary of Measurement Methods for Radial Resistivity Variation of Silicon Wafers

GB/T 1552-1995 Determination of Resistivity of Silicon and Germanium Single Crystals—Linear Four-Probe Method

GB/T 6617-1995 Determination of Silicon Wafer Resistivity—Spreading Resistance Probe Method

GB/T 6617-2009 Determination of Silicon Wafer Resistivity—Spreading Resistance Probe Method

Graphene Powder Resistivity Tester The insulation resistance between probes (with springs and external leads) or between other parts of the probe system should be at least 10^10 Ω. Probe arrangement and spacing: Four probes should be arranged in a straight line with equal spacing. Probe spacing and tip condition should comply with the provisions of GB/T 552.

Confirm whether the instrument supports optional molds or sensors (e.g., pressure, temperature) to accommodate diverse testing needs.

Graphene Powder Resistivity Tester The clauses in the following documents become clauses of this standard through reference. For dated references, all subsequent amendments (excluding errata) or revisions do not apply to this standard. However, parties reaching agreements based on this standard are encouraged to investigate whether the latest versions of these documents are applicable. For undated references, the latest version applies. GB/T 1552 Determination of Resistivity of Silicon and Germanium Single Crystals—Linear Four-Probe Method

Selection Recommendations: Clarify testing requirements. Key components using imported elements ensure longer instrument lifespan. Application Scenario Expansion: Use clean tweezers or a suction pen to place the sample on the stage. The sample should remain long enough to reach thermal equilibrium at 23°C ± 1°C (2004).

Graphene Powder Resistivity Tester For measuring samples with special shapes or sizes (e.g., flat steel grounding bodies), dedicated samplers are required (e.g., semiconductor rubber/plastic resistivity instrument sampling).

Brand qualifications and after-sales service are essential to avoid subsequent usage issues.

Probe-sample pressure is divided into two types: less than 0.3 N and 0.3 N–0.8 N. Current output: DC current 0–1000 mA continuously adjustable, powered by AC supply. Error: ±0.2% reading ±2 digits.

Interference factors: Probe material and shape, and whether the contact with the silicon wafer surface meets point current source injection conditions, affect testing accuracy.

Measurement error: ±5%.

This instrument is equipped with various measuring devices to test the conductivity of different materials. LCD display eliminates manual calculation and includes temperature compensation. Conductivity units are automatically selected. The BEST-300C Material Conductivity Tester automatically measures and switches ranges based on results, eliminating repeated manual settings. Optional: Software allows computer control, data storage and printing, and automatic generation of charts and reports.

Power supply: 220 V ±10%, 50 Hz/60 Hz.

250 μm hemispherical or flat circular cross-section with a radius of 50 μm–125 μm.

Main unit dimensions: 330 mm × 340 mm × 120 mm.

Measurement accuracy: ±(0.1% reading).

Resolution: Minimum 1 μΩ.

Industry standards: Confirm compliance with YS/T 587.6-2006, GB/T 24521-2018, etc., to meet carbon material testing requirements. Material types: Suitable for conductive or semiconductive powders such as graphite, carbon powder, lithium battery materials, and powder metallurgy. Automation and functionality: Current output: DC current 0–1000 mA continuously adjustable, powered by AC supply. Provides complete technical support and after-sales service to ensure long-term stable use. Operation and maintenance convenience: Human-machine interface design; conventional testing may relax accuracy requirements appropriately. Test current adaptability: Semiconducting materials are sensitive to test current; adjust based on material to improve measurement accuracy, especially for micro-resistance or high-resistance scenarios. Compared to traditional two-wire methods or megohmmeters, the four-wire method is superior. Instrument type and portability: 1. Handheld vs. Benchtop Handheld: Suitable for on-site rapid testing, highly portable, but may sacrifice some accuracy.

For example, 2 MΩ range error: ±0.5% reading +2 digits). Accuracy requirements: High-precision scenarios (e.g., laboratories) require instruments with smaller errors.

Selecting a powder resistivity tester requires comprehensive consideration of measurement needs, material characteristics, testing environment, and budget. The following is an analysis of key selection points and recommendations based on search results: Core Selection Factors

Testing standards and applicable materials: Current reversal switch. Conductivity: 5×10^-6 to 1×10^8 mS/cm.

Characteristics. Summary recommendations: Clarify the resistance range of the material to be tested and the testing environment; select an instrument with matching range and accuracy; prioritize four-wire methods.

Potentiometer and galvanometer or digital voltmeter, range 1 mV–100 mV, resolution 0.1%, DC input impedance not less than...

Resistance: Between 1×10^-5 and 2×10^5 Ω·cm. Ensure the tester's measurement range covers actual application needs. For example, if measuring medium to high resistance...

Light, high frequency, vibration, strong electromagnetic fields, and temperature variations in the testing environment can affect results.

If simultaneous measurement of soil resistivity or leakage current is needed, consider a multifunctional tester, but confirm compatibility with semiconducting materials.

Instruments with data export functions facilitate subsequent analysis. For example, a 3-digit display and automatic overload提示 improve operational efficiency. Instrument

and maintenance: Choose instruments with sturdy casings, dust and water resistance (e.g., IP54 rating), suitable for outdoor or complex industrial environments. Also,

This standard applies to measuring the average sheet resistance of thin layers formed by epitaxy, diffusion, or ion implantation on or beneath the surface of silicon wafers with diameters greater than 15.9 mm. The silicon substrate conductivity type is opposite to that of the measured layer. Applicable for layers no thinner than 0.2 μm, with sheet resistance measurement range of 10 Ω/sq to 5000 Ω/sq. This method may also apply to higher or lower sheet resistance values, but measurement accuracy has not been evaluated.

Reference the selection approach for loop resistance testers (e.g., continuously adjustable current design).

Consider the manufacturer's technical support capabilities. Precautions: Error sources—powder compaction, mold cleanliness, ambient temperature, and humidity may affect results; standardize operating procedures. Calibration and maintenance: Regularly calibrate using standard resistors (e.g., optional 1–5 standard resistors) to ensure long-term stability.

Double-pole double-throw potential selection switch. Suitable for precision testing of semiconducting materials. Environmental adaptability: The instrument must operate under specific temperature and humidity conditions (e.g., temperature23±2°C,less than10^10 Ω. Electronic measurement device applicability should comply with GB/T 1552. Megohmmeter capable of indicating leakage resistance up to 10^10 Ω. Temperature probe: 0°C–40°C, minimum scale 0.1°C.

Automated operation: High-end models from Beijing Guangjing Instrument Equipment Co. support automatic pressure application, demolding, data acquisition, and curve generation, suitable for batch testing needs; manual models are lower cost. Additional functions: Some instruments integrate real-time temperature and pressure monitoring or support high-temperature testing for electrical performance analysis under extreme conditions.

Resistivity: 1×10^-6 to 2×10^6 Ω·cm.

Ranges: 1 μA, 10 μA, 100 μA, 1 mA, 10 mA, 1000 mA.

This instrument features a 4.3-inch large LCD screen displaying resistance, resistivity, sheet resistance, conductivity, temperature, and pressure values simultaneously, with automatic unit conversion. Different test fixtures can be configured to meet various material testing requirements. Test fixtures can be selected based on product and testing needs.

Standards), ensuring safety and reliability. For example, some instruments explicitly comply with power industry execution standards (e.g., DL/T 845.4).

Measurement voltage ranges: 2 mV, 20 mV, 200 mV, 2 V.

1. Measurement Range and Accuracy Resistivity range: Most instruments cover 10^-7 to 10^8 Ω·m, with some high-temperature models reaching higher ranges (e.g., 10^-8 to 10^8 Ω·m). Accuracy requirements: High-precision models can achieve resistivity measurement errors as low as ±0.01 μΩ·m, while economical devices typically have errors of ±0.1% to ±0.3%. Current and voltage accuracy: Constant current source output must be stable (e.g., ±0.01 mA); voltage resolution should reach 0.1 μV to support weak signal detection.

Provides Chinese or English operating interface options to meet domestic and international customer needs.

Voltmeter input impedance may introduce testing errors. Silicon wafer geometry and surface contamination can affect results.

This instrument is equipped with various measuring devices to test the conductivity of different materials. LCD display eliminates manual calculation and includes temperature compensation. Conductivity units are automatically selected. The BEST-300C Material Conductivity Tester automatically measures and switches ranges based on results, eliminating repeated manual settings. Optional: Software allows computer control, data storage and printing, and automatic generation of charts and reports.

Application scope: The four-terminal test method is currently an advanced testing method primarily for products with high precision requirements. This instrument is widely used in production enterprises, universities, and research departments as an important tool for inspecting and analyzing the quality of conductor and semiconductor materials.

Sample stage and probe holder: The sample stage and probe holder should comply with GB/T 152. The sample stage should have a 360° rotation device with an error not exceeding ±5°. Measurement device: The typical circuit of the measurement device is shown in Figure 1.

Constant current source provides the current required by the sample according to the recommended values in Table 1, with an accuracy of ±0.5%.

GB/T 1555 Method for Determining Orientation of Semiconductor Single Crystals
Main unit dimensions: 330 mm × 340 mm × 120 mm
For semiconductor materials with uniform resistivity, the spreading resistance of a probe contacting the material with radius a is expressed by formula (1):
This method first measures the spreading resistance of repeatedly formed point contacts, then uses a calibration curve to determine the resistivity near the probe contact point. The spreading resistance R_s is the ratio of the potential drop between a conductive metal probe and a reference point on the wafer to the current flowing through the probe.
Scope: This standard specifies the spreading resistance probe method for measuring silicon wafer resistivity.
This standard applies to measuring the resistivity of silicon wafers with known crystal orientation and conductivity type, and the resistivity of silicon epitaxial layers with the same or opposite conductivity type as the substrate. Measurement range: 10^-3 Ω·cm to 10^4 Ω·cm.
Round test accuracy: ±5%. Mechanical device probe holder uses a double-probe structure. The probe holder supports the probes, allowing them to descend to the sample surface with repeatable speed and predetermined pressure, and adjust the contact point position. Probes are made of hard, wear-resistant, good conductive materials such as osmium, tungsten carbide, or tungsten-rhenium alloys. Tip curvature radius no greater than 25 μm, included angle 30°–60°. Probe spacing: 40 μm–100 μm.
Provides Chinese or English operating interface options to meet domestic and international customer needs.
Resolution: 0.1 μV, 1 μV, 10 μV, 100 μV.
In international standard classification, the four-probe method involves semiconductor materials, metal material testing, insulating fluids, veterinary medicine, composite reinforcement materials, electrical components, non-destructive testing, integrated circuits, microelectronics, soil quality, soil science, water quality, electronic display devices, non-ferrous metals.
This instrument features a 4.3-inch large LCD screen displaying resistance, resistivity, sheet resistance, conductivity, temperature, and pressure values simultaneously, with automatic unit conversion. Different test fixtures can be configured to meet various material testing requirements. Test fixtures can be selected based on product and testing needs.
Current output: DC current 0–1000 mA continuously adjustable, powered by AC supply.
GB/T 1551-1995 Determination of Resistivity of Silicon and Germanium Single Crystals—DC Two-Probe Method
Where: ρ—resistivity in ohm-centimeters (Ω·cm); a—contact radius in centimeters (cm); R_s—spreading resistance in ohms (Ω). The equation holds under the following three assumptions:
Measurement instruments and environment: This standard selects automatic measuring instruments with current range and accuracy: 10 nA–10 mA, ±0.1%.
Constant voltage method, constant current method, and logarithmic comparator method can be used. Circuit diagrams are shown in Figures 1, 2, and 3, respectively. Specific calculation formulas are given in formulas (2), (3), and (4).
GB/T 7 Infrared Reflection Measurement Method for Lightly Doped Silicon Epitaxial Layer Thickness on Heavily Doped Substrates
Voltage range and accuracy: ≤20 mV, mainly ±0.1%.
GB/T 6617-1995 Determination of Silicon Wafer Resistivity—Spreading Resistance Probe Method
GB/T 1552-1995 Determination of Resistivity of Silicon and Germanium Single Crystals—Linear Four-Probe Method
GB/T -2009 Determination of Sheet Resistance of Silicon Epitaxial Layers, Diffusion Layers, and Ion Implantation Layers—Linear Four-Probe Method
Conductivity: 5×10^-6 to 1×10^8 mS/cm.
Avoid the presence of OH- and F- ions on the sample surface. If aqueous solvents or materials are used in sample preparation or cleaning, the sample may be heat-treated in air at 0°C for 10–15 minutes before measurement.
Attach the sample to the斜面 of the grinding head, apply suitable abrasive paste to the sample surface for grinding, and clean the sample thoroughly after grinding.
Measurement accuracy: ±(0.1% reading).
Measurement environment temperature: 23°C ± 3°C, relative humidity not exceeding 65%. Measurement should be conducted under scattered light or dark conditions. If necessary, place the probe holder on a vibration isolation platform.
Sample preparation: Samples for measuring radial resistivity uniformity should have a good mirror-like surface. Preparation methods include: chemical mechanical polishing (CMP)/aqueous mechanical polishing/non-aqueous mechanical polishing. Epitaxial surfaces can be used directly for measurement.
Error: ±0.2% reading ±2 digits.
This instrument is equipped with various measuring devices to test the conductivity of different materials. LCD display eliminates manual calculation and includes temperature compensation. Conductivity units are automatically selected. The BEST-300C Material Conductivity Tester automatically measures and switches ranges based on results, eliminating repeated manual settings. Optional: Software allows computer control, data storage and printing, and automatic generation of charts and reports.
Sample preparation for measuring longitudinal resistivity distribution: Unless otherwise specified, try to extract the sample from the central area of the wafer. Select appropriate grinding heads based on testing depth and accuracy requirements.
Interference factors: If the silicon wafer surface is contaminated by chloride ions or has surface damage, it will cause testing errors; if the testing environment's temperature and light intensity vary, it will affect results; if there is射频 interference in the testing environment, it will affect results.
GB/T 6617-2009 Determination of Silicon Wafer Resistivity—Spreading Resistance Probe Method
Resistivity: 1×10^-6 to 2×10^6 Ω·cm.
In Chinese standard classification, the four-probe method involves semi-metallic and semiconductor materials comprehensive, metal physical property testing methods, , , electrical alloy parts, special ceramics, mass spectrometers, liquid chromatographs, energy spectrometers and their combined devices, resistors, semiconductor integrated circuits, engineering geology, hydrogeological survey and geotechnical engineering, water environment hazardous substance analysis methods, electrical materials and general parts comprehensive, semi-metals, elemental semiconductor materials, metal non-destructive testing methods.
Ranges: 1 μA, 10 μA, 100 μA, 1 mA, 10 mA, 1000 mA.
Sample stage: Insulated vacuum chuck or other device that can fix the silicon wafer, capable of displacement in two perpendicular directions with step increments of 5 μm–500 μm.
Measurement error: ±5%.

To ensure small-signal measurement conditions, the probe potential should not exceed 20 mV.

Resistance: 1×10^-5 to 2×10^5 Ω.

Standard configuration: One test platform, one main unit, one set of power cables and data cables.

CB/T1550 Test Method for Conductivity Type of Extrinsic Semiconductor Materials GB/T 1552 Determination of Resistivity of Silicon and Germanium Single Crystals—Linear Four-Probe Method

The four-terminal test method is currently an advanced testing method primarily for products with high precision requirements. This instrument is widely used in production enterprises, universities, and research departments as an important tool for inspecting and analyzing the quality of conductor and semiconductor materials.

Power supply: 220 V ±10%, 50 Hz/60 Hz.

Where: R_s—precision resistance value in ohms (Ω); log(告)—logarithmic comparator output.

Display method: LCD display.

Method principle: The spreading resistance method is an experimental comparison method.

Measurement voltage ranges: 2 mV, 20 mV, 200 mV, 2 V.

Insulation: DC insulation resistance between probes and between any probe and the chassis should be greater than 1×10^10 Ω. Measurement environment

Resistance measurement range: The distance between two probes must be greater than 10 times the sample thickness. Resistivity must be uniform; surface protective films or contact barriers should not form.